| Anzahl | Preis |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RF6C055BCTCR ROHM Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RF6C055BCTCR nach Preis ab 0.53 EUR bis 1.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RF6C055BCTCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET P-CHANNEL 20V 5.5A TUMT6Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: TUMT6 |
auf Bestellung 2710 Stücke: Lieferzeit 10-14 Tag (e) |
|