| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.89 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |
| 3000+ | 0.55 EUR |
| 6000+ | 0.52 EUR |
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Technische Details RF6C055BCTCR ROHM Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 1.2V @ 1mA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RF6C055BCTCR nach Preis ab 0.63 EUR bis 2.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RF6C055BCTCR | Rohm Semiconductor |
 Description: MOSFET P-CHANNEL 20V 5.5A TUMT6Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1.2V @ 1mA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 4.5V Supplier Device Package: TUMT6 |
auf Bestellung 2710 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF6C055BCTCR |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: TUMT6
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Supplier Device Package: TUMT6
auf Bestellung 2710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.03 EUR |
| 16+ | 1.37 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.63 EUR |