auf Bestellung 1933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
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Technische Details RF6C055BCTCR ROHM Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: TUMT6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V.
Weitere Produktangebote RF6C055BCTCR nach Preis ab 0.53 EUR bis 1.71 EUR
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RF6C055BCTCR | Hersteller : Rohm Semiconductor |
 Description: MOSFET P-CHANNEL 20V 5.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V |
auf Bestellung 2710 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF6C055BCTCR | Hersteller : ROHM SEMICONDUCTOR |
RF6C055BCTCR SMD P channel transistors |
Produkt ist nicht verfügbar |
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RF6C055BCTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 25.8mOhm @ 5.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 10 V |
Produkt ist nicht verfügbar |