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RF6E045AJTCR

RF6E045AJTCR Rohm Semiconductor


datasheet?p=RF6E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
Mindestbestellmenge: 3000
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Technische Details RF6E045AJTCR Rohm Semiconductor

Description: MOSFET N-CHANNEL 30V 4.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V.

Weitere Produktangebote RF6E045AJTCR nach Preis ab 0.3 EUR bis 0.99 EUR

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RF6E045AJTCR RF6E045AJTCR Hersteller : Rohm Semiconductor datasheet?p=RF6E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 30V 4.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 4748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
22+0.83 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.37 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
RF6E045AJTCR RF6E045AJTCR Hersteller : ROHM Semiconductor datasheet?p=RF6E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs Nch 30V 4.5A Si MOSFET
auf Bestellung 6744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.99 EUR
10+0.76 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
3000+0.31 EUR
9000+0.3 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RF6E045AJTCR Hersteller : ROHM SEMICONDUCTOR datasheet?p=RF6E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RF6E045AJTCR SMD N channel transistors
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