RF6E045AJTCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CHANNEL 30V 4.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
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Technische Details RF6E045AJTCR Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V.
Weitere Produktangebote RF6E045AJTCR nach Preis ab 0.36 EUR bis 0.97 EUR
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RF6E045AJTCR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V |
auf Bestellung 5448 Stücke: Lieferzeit 10-14 Tag (e) |
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RF6E045AJTCR | Hersteller : ROHM Semiconductor |
MOSFET Nch 30V 4.5A Si MOSFET |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RF6E045AJTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1W; SOT363T Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 1W Case: SOT363T Gate-source voltage: ±12V On-state resistance: 23.7mΩ Mounting: SMD Gate charge: 8.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RF6E045AJTCR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1W; SOT363T Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 1W Case: SOT363T Gate-source voltage: ±12V On-state resistance: 23.7mΩ Mounting: SMD Gate charge: 8.1nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |