RF9L120BJFRATCR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: PCH -60V -12A, DFN2020Y7LSAA, PO
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 106mOhm @ 3A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 273µA
Supplier Device Package: DFN2020Y7LSAA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RF9L120BJFRATCR Rohm Semiconductor
Description: PCH -60V -12A, DFN2020Y7LSAA, PO, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 106mOhm @ 3A, 10V, Power Dissipation (Max): 23W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 273µA, Supplier Device Package: DFN2020Y7LSAA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +5V, -20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote RF9L120BJFRATCR nach Preis ab 0.64 EUR bis 2.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RF9L120BJFRATCR | Hersteller : ROHM Semiconductor |
MOSFETs Pch -60V -12A, DFN2020Y7LSAA, Power MOSFET for Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
RF9L120BJFRATCR | Hersteller : Rohm Semiconductor |
Description: PCH -60V -12A, DFN2020Y7LSAA, PO Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 106mOhm @ 3A, 10V Power Dissipation (Max): 23W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 273µA Supplier Device Package: DFN2020Y7LSAA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
RF9L120BJFRATCR | Hersteller : ROHM |
Description: ROHM - RF9L120BJFRATCR - Leistungs-MOSFET, p-Kanal, 60 V, 12 A, 0.106 ohm, WFDFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 12A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 23W Bauform - Transistor: WFDFN2020 Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.106ohm SVHC: To Be Advised |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |