RFB18N10CS Harris Corporation
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 18A TO220AB-5
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-5
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Description: MOSFET N-CH 100V 18A TO220AB-5
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-5
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
121+ | 4.01 EUR |
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Technische Details RFB18N10CS Harris Corporation
Description: MOSFET N-CH 100V 18A TO220AB-5, Packaging: Bulk, Package / Case: TO-220-5, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V, FET Feature: Current Sensing, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-5, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V.
Weitere Produktangebote RFB18N10CS
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RFB18N10CS |
auf Bestellung 3789 Stücke: Lieferzeit 21-28 Tag (e) |