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RFD16N05SM9A

RFD16N05SM9A onsemi

rfd16n05sm-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 50V 16A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.8 EUR
5000+0.71 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RFD16N05SM9A onsemi

Description: MOSFET N-CH 50V 16A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V.

Weitere Produktangebote RFD16N05SM9A nach Preis ab 0.81 EUR bis 2.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RFD16N05SM9A RFD16N05SM9A Hersteller : onsemi / Fairchild RFD16N05SM-D.pdf MOSFETs Power MOSFET
auf Bestellung 4942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.22 EUR
10+1.51 EUR
100+1.18 EUR
500+0.94 EUR
1000+0.85 EUR
2500+0.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
RFD16N05SM9A RFD16N05SM9A Hersteller : onsemi rfd16n05sm-d.pdf Description: MOSFET N-CH 50V 16A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 6107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.51 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.87 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
RFD16N05SM9A RFD16N05SM9A Hersteller : ON Semiconductor rfd16n05sm.pdf Trans MOSFET N-CH Si 50V 16A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
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RFD16N05SM9A RFD16N05SM9A Hersteller : ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEF75F1BB8E745&compId=RFD16N05SM.pdf?ci_sign=11584988654cc6f71ae7865d85d2e4358f7455d0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Case: DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 80nC
On-state resistance: 47mΩ
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 50V
Power dissipation: 72W
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH