RFL1N12 Harris Corporation
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-205AF Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1A, 10V
Power Dissipation (Max): 8.33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-205AF (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 233+ | 2.33 EUR |
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Technische Details RFL1N12 Harris Corporation
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-205AF Metal Can, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1A, 10V, Power Dissipation (Max): 8.33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-205AF (TO-39), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.