RFN10B3STL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: DIODE GEN PURP 350V 10A CPD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: CPD
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
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Technische Details RFN10B3STL Rohm Semiconductor
Description: DIODE GEN PURP 350V 10A CPD, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: CPD, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 350 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 350 V.
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RFN10B3STL | Hersteller : Rohm Semiconductor |
Description: DIODE GEN PURP 350V 10A CPD Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: CPD Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 350 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 350 V |
Produkt ist nicht verfügbar |