RFN6BGE2DTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
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Technische Details RFN6BGE2DTL Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B, Part Status: Active, Operating Temperature - Junction: 150°C, Supplier Device Package: TO-252GE, Current - Average Rectified (Io) (per Diode): 3A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V.
Weitere Produktangebote RFN6BGE2DTL nach Preis ab 1.02 EUR bis 2.81 EUR
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RFN6BGE2DTL | ROHM Semiconductor |
Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY DIODE |
auf Bestellung 2483 Stücke: Lieferzeit 10-14 Tag (e) |
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RFN6BGE2DTL | Rohm Semiconductor |
Description: SUPER FAST RECOVERY DIODE. RFN6B Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-252GE Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RFN6BGE2DTL |
|
Hersteller: ROHM Semiconductor
Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY DIODE
Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY DIODE
auf Bestellung 2483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.15 EUR |
| 2500+ | 1.02 EUR |
| RFN6BGE2DTL |
|
Hersteller: Rohm Semiconductor
Description: SUPER FAST RECOVERY DIODE. RFN6B
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: SUPER FAST RECOVERY DIODE. RFN6B
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-252GE
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 10+ | 2.3 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.24 EUR |