RFNL10TJ6SGC9 ROHM Semiconductor
Hersteller: ROHM SemiconductorDiodes - General Purpose, Power, Switching 600V Vrm 10A Io Recovery Diode
auf Bestellung 985 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 3.56 EUR |
| 17+ | 3.17 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.05 EUR |
| 1000+ | 1.61 EUR |
| 2000+ | 1.54 EUR |
| 5000+ | 1.49 EUR |
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Technische Details RFNL10TJ6SGC9 ROHM Semiconductor
Description: DIODE GP 600V 10A TO220ACFP, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220ACFP, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote RFNL10TJ6SGC9 nach Preis ab 1.64 EUR bis 3.87 EUR
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RFNL10TJ6SGC9 | Hersteller : Rohm Semiconductor |
Description: DIODE GP 600V 10A TO220ACFP Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 3992 Stücke: Lieferzeit 21-28 Tag (e) |
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