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RFP10N15L

RFP10N15L Harris Corporation

HRISD017-6-66.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 35079 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
342+2.17 EUR
Mindestbestellmenge: 342
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Technische Details RFP10N15L Harris Corporation

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 150 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.

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RFP10N15L HRISD017-6-66.pdf?t.download=true&u=5oefqw
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)