RFP10N15L Harris Corporation

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: TO-220-3, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.