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RFP25N06L

RFP25N06L Harris Corporation

HRISD017-6-108.pdf?t.download=true&u=5oefqw Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12.5A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
115+4.3 EUR
Mindestbestellmenge: 115
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Technische Details RFP25N06L Harris Corporation

Description: N-CHANNEL, MOSFET, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 12.5A, 5V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.

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RFP25N06L Hersteller : HARRIS HRISD017-6-108.pdf?t.download=true&u=5oefqw
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)