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RFUH10TF6S

RFUH10TF6S Rohm Semiconductor

datasheet?p=RFUH10TF6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 10A TO220NFM
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Technische Details RFUH10TF6S Rohm Semiconductor

Description: DIODE GEN PURP 600V 10A TO220NFM, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220NFM, Operating Temperature - Junction: 150°C (Max), Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.

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RFUH10TF6S RFUH10TF6S Hersteller : ROHM Semiconductor rfuh10tf6s-313280.pdf Diodes - General Purpose, Power, Switching Diode Switching 600V 10A
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