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RGCL60TS60DGC11

RGCL60TS60DGC11 ROHM Semiconductor


rgcl60ts60d-e-1871897.pdf Hersteller: ROHM Semiconductor
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.57 EUR
10+ 6.21 EUR
25+ 5.12 EUR
100+ 5.03 EUR
250+ 4.1 EUR
900+ 3.68 EUR
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Technische Details RGCL60TS60DGC11 ROHM Semiconductor

Description: IGBT TRNCH FIELD 600V 48A TO247N, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/186ns, Switching Energy: 770µJ (on), 1.11mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 68 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 111 W.

Weitere Produktangebote RGCL60TS60DGC11 nach Preis ab 6.4 EUR bis 7.62 EUR

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RGCL60TS60DGC11 RGCL60TS60DGC11 Hersteller : Rohm Semiconductor rgcl60ts60d-e.pdf Description: IGBT TRNCH FIELD 600V 48A TO247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.62 EUR
10+ 6.4 EUR
Mindestbestellmenge: 3
RGCL60TS60DGC11 Hersteller : ROHM SEMICONDUCTOR rgcl60ts60d-e.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3
Mounting: THT
Collector current: 30A
Gate-emitter voltage: ±30V
Type of transistor: IGBT
Case: TO247-3
Power dissipation: 55W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 68nC
Collector-emitter voltage: 600V
Turn-off time: 479ns
Turn-on time: 95ns
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RGCL60TS60DGC11 Hersteller : ROHM SEMICONDUCTOR rgcl60ts60d-e.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3
Mounting: THT
Collector current: 30A
Gate-emitter voltage: ±30V
Type of transistor: IGBT
Case: TO247-3
Power dissipation: 55W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 68nC
Collector-emitter voltage: 600V
Turn-off time: 479ns
Turn-on time: 95ns
Pulsed collector current: 120A
Produkt ist nicht verfügbar