RGCL60TS60DGC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FS 600V 48A TO-247N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/186ns
Switching Energy: 770µJ (on), 1.11mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 111 W
auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.71 EUR |
| 10+ | 5.82 EUR |
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Technische Details RGCL60TS60DGC11 Rohm Semiconductor
Description: IGBT TRENCH FS 600V 48A TO-247N, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/186ns, Switching Energy: 770µJ (on), 1.11mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 68 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 111 W.
Weitere Produktangebote RGCL60TS60DGC11 nach Preis ab 3.75 EUR bis 8.99 EUR
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RGCL60TS60DGC11 | Hersteller : ROHM Semiconductor |
IGBTs ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGCL60TS60DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3 Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 68nC Mounting: THT Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 30A Pulsed collector current: 120A Turn-on time: 95ns Turn-off time: 479ns Type of transistor: IGBT Power dissipation: 55W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGCL60TS60DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 55W; TO247-3 Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 68nC Mounting: THT Case: TO247-3 Collector-emitter voltage: 600V Gate-emitter voltage: ±30V Collector current: 30A Pulsed collector current: 120A Turn-on time: 95ns Turn-off time: 479ns Type of transistor: IGBT Power dissipation: 55W |
Produkt ist nicht verfügbar |