RGF1J-E3/67A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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Technische Details RGF1J-E3/67A Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214BA, Packaging: Tape & Reel (TR), Package / Case: DO-214BA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214BA (GF1), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 600 V.
Weitere Produktangebote RGF1J-E3/67A nach Preis ab 0.23 EUR bis 0.7 EUR
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RGF1J-E3/67A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214BA; Ufmax: 1.3V Capacitance: 8.5pF Mounting: SMD Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Leakage current: 0.1mA Load current: 1A Max. forward voltage: 1.3V Max. forward impulse current: 30A Max. off-state voltage: 0.6kV Quantity in set/package: 1500pcs. Kind of package: 7 inch reel Case: DO214BA Features of semiconductor devices: fast switching |
auf Bestellung 4618 Stücke: Lieferzeit 14-21 Tag (e) |
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RGF1J-E3/67A | Vishay General Semiconductor |
Small Signal Switching Diodes 1 Amp 600 Volt 250ns 30 Amp IFSM |
auf Bestellung 7676 Stücke: Lieferzeit 10-14 Tag (e) |
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RGF1J-E3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO214BA Packaging: Cut Tape (CT) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RGF1J-E3/67A |
|
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214BA; Ufmax: 1.3V
Capacitance: 8.5pF
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1500pcs.
Kind of package: 7 inch reel
Case: DO214BA
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214BA; Ufmax: 1.3V
Capacitance: 8.5pF
Mounting: SMD
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 0.1mA
Load current: 1A
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Max. off-state voltage: 0.6kV
Quantity in set/package: 1500pcs.
Kind of package: 7 inch reel
Case: DO214BA
Features of semiconductor devices: fast switching
auf Bestellung 4618 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 246+ | 0.29 EUR |
| 307+ | 0.23 EUR |
| RGF1J-E3/67A |
|
Hersteller: Vishay General Semiconductor
Small Signal Switching Diodes 1 Amp 600 Volt 250ns 30 Amp IFSM
Small Signal Switching Diodes 1 Amp 600 Volt 250ns 30 Amp IFSM
auf Bestellung 7676 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.38 EUR |
| 1000+ | 0.29 EUR |
| 1500+ | 0.27 EUR |
| 3000+ | 0.24 EUR |
| RGF1J-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.42 EUR |