 
RGP10ME-E3/73 Vishay General Semiconductor - Diodes Division
 Hersteller: Vishay General Semiconductor - Diodes Division
                                                Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 3000+ | 0.26 EUR | 
| 6000+ | 0.24 EUR | 
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Technische Details RGP10ME-E3/73 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL, Packaging: Tape & Box (TB), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V. 
Weitere Produktangebote RGP10ME-E3/73 nach Preis ab 0.29 EUR bis 1.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | RGP10ME-E3/73 | Hersteller : Vishay General Semiconductor - Diodes Division |  Description: DIODE GEN PURP 1KV 1A DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | auf Bestellung 1554 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | RGP10ME-E3/73 | Hersteller : Vishay General Semiconductor |  Small Signal Switching Diodes 1.0A 1000 Volt 500ns | auf Bestellung 10740 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | RGP10ME-E3\73 | Hersteller : Vishay | Small Signal Switching Diodes 1A,1000V,500NS,SUPERT,NOT FOR NEW DESIGN | Produkt ist nicht verfügbar |