RGS00TS65DHRC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.91 EUR |
| 50+ | 5.91 EUR |
| 100+ | 4.4 EUR |
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Technische Details RGS00TS65DHRC11 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 36ns/115ns, Switching Energy: 1.46mJ (on), 1.29mJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 58 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 326 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RGS00TS65DHRC11 nach Preis ab 5.09 EUR bis 11.85 EUR
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RGS00TS65DHRC11 | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 434 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS00TS65DHRC11 | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS00TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 88A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/115ns Switching Energy: 1.46mJ (on), 1.29mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 383 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS00TS65DHRC11 | ROHM Semiconductor |
IGBTs IGBT FieldStop Trnch 50A; TO-247N; 650V |
auf Bestellung 379 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGS00TS65DHRC11 |
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Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube
Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.23 EUR |
| 25+ | 9.65 EUR |
| 50+ | 9.09 EUR |
| 100+ | 8.58 EUR |
| 250+ | 8.2 EUR |
| RGS00TS65DHRC11 |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube
Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.23 EUR |
| 25+ | 9.65 EUR |
| 50+ | 9.09 EUR |
| 100+ | 8.58 EUR |
| 250+ | 8.2 EUR |
| RGS00TS65DHRC11 |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 88A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 383 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.95 EUR |
| 30+ | 6.24 EUR |
| 120+ | 5.2 EUR |
| RGS00TS65DHRC11 |
|
Hersteller: ROHM Semiconductor
IGBTs IGBT FieldStop Trnch 50A; TO-247N; 650V
IGBTs IGBT FieldStop Trnch 50A; TO-247N; 650V
auf Bestellung 379 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.85 EUR |
| 10+ | 6.76 EUR |
| 100+ | 5.49 EUR |
| 450+ | 5.09 EUR |