RGS00TS65EHRC11 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube
| Anzahl | Privatkunde |
|---|---|
| 20+ | 8.87 EUR |
| 25+ | 8.35 EUR |
| 50+ | 7.87 EUR |
| 100+ | 7.43 EUR |
| 250+ | 7.09 EUR |
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Technische Details RGS00TS65EHRC11 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 113 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 36ns/115ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 58 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 326 W.
Weitere Produktangebote RGS00TS65EHRC11 nach Preis ab 9.23 EUR bis 18.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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RGS00TS65EHRC11 | ROHM Semiconductor |
IGBTs TO247 650V 50A TRNCH |
auf Bestellung 891 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS00TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 88A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 113 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/115ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 58 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W |
auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RGS00TS65EHRC11 |
|
Hersteller: ROHM Semiconductor
IGBTs TO247 650V 50A TRNCH
IGBTs TO247 650V 50A TRNCH
auf Bestellung 891 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.78 EUR |
| 10+ | 11.33 EUR |
| 25+ | 9.78 EUR |
| RGS00TS65EHRC11 |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 88A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 113 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Description: IGBT TRENCH FS 650V 88A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 113 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
auf Bestellung 444 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.3 EUR |
| 30+ | 10.88 EUR |
| 120+ | 9.23 EUR |