RGS00TS65EHRC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorTrans IGBT Chip N-CH 650V 88A 326000mW Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 7.96 EUR |
| 25+ | 7.35 EUR |
| 50+ | 6.8 EUR |
| 100+ | 6.32 EUR |
| 250+ | 5.88 EUR |
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Technische Details RGS00TS65EHRC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 113 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 36ns/115ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 58 nC, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 326 W.
Weitere Produktangebote RGS00TS65EHRC11 nach Preis ab 8.22 EUR bis 15.49 EUR
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RGS00TS65EHRC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors TO247NNP 650V TRNCH 50A |
auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGS00TS65EHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Mounting: THT Turn-on time: 70ns Turn-off time: 299ns Type of transistor: IGBT Power dissipation: 163W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 58nC Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RGS00TS65EHRC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 88A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 113 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/115ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 58 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W |
Produkt ist nicht verfügbar |
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| RGS00TS65EHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Mounting: THT Turn-on time: 70ns Turn-off time: 299ns Type of transistor: IGBT Power dissipation: 163W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 58nC Case: TO247-3 Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A |
Produkt ist nicht verfügbar |