RGS50NL65DHRBTL ROHM Semiconductor
Hersteller: ROHM SemiconductorIGBTs 8us Short-Circuit Tolerance, 650V 25A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS50NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification.
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.45 EUR |
| 10+ | 6.55 EUR |
| 25+ | 5.67 EUR |
| 100+ | 4.66 EUR |
| 250+ | 4.17 EUR |
| 500+ | 3.94 EUR |
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Technische Details RGS50NL65DHRBTL ROHM Semiconductor
Description: IGBT TRENCH FS 650V 50A TO263L, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 28ns/91ns, Switching Energy: 810µJ (on), 650µJ (off), Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 31 nC, Grade: Automotive, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 206 W, Qualification: AEC-Q101.
Weitere Produktangebote RGS50NL65DHRBTL nach Preis ab 2.53 EUR bis 6.21 EUR
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RGS50NL65DHRBTL | Hersteller : ROHM |
Description: ROHM - RGS50NL65DHRBTL - IGBT, AEC-Q101, 50 A, 1.65 V, 206 W, 650 V, TO-263L, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 206W Bauform - Transistor: TO-263L Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 50A SVHC: To Be Advised |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS50NL65DHRBTL | Hersteller : ROHM |
Description: ROHM - RGS50NL65DHRBTL - IGBT, AEC-Q101, 50 A, 1.65 V, 206 W, 650 V, TO-263L, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 206W Bauform - Transistor: TO-263L Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 50A SVHC: To Be Advised |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS50NL65DHRBTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 50A 206W Automotive 3-Pin(2+Tab) LPDL |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS50NL65DHRBTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 50A 206W Automotive 3-Pin(2+Tab) LPDL |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS50NL65DHRBTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 50A TO263L Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/91ns Switching Energy: 810µJ (on), 650µJ (off) Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 31 nC Grade: Automotive Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 206 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RGS50NL65DHRBTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 50A TO263L Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/91ns Switching Energy: 810µJ (on), 650µJ (off) Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 31 nC Grade: Automotive Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 206 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |