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RGS60NL65DHRBTL

RGS60NL65DHRBTL ROHM Semiconductor

datasheet?p=RGS60NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: ROHM Semiconductor
IGBT Transistors 8 s Short-Circuit Tolerance, 650V 30A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS60NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualific
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+8.54 EUR
10+ 7.16 EUR
25+ 6.76 EUR
100+ 5.79 EUR
250+ 5.47 EUR
500+ 5.16 EUR
1000+ 4.4 EUR
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Technische Details RGS60NL65DHRBTL ROHM Semiconductor

Description: IGBT TRENCH FS 650V 59A TO263L, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/94ns, Switching Energy: 650µJ (on), 790µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 36 nC, Grade: Automotive, Current - Collector (Ic) (Max): 59 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 228 W, Qualification: AEC-Q101.

Weitere Produktangebote RGS60NL65DHRBTL nach Preis ab 3.85 EUR bis 8.61 EUR

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RGS60NL65DHRBTL RGS60NL65DHRBTL Hersteller : Rohm Semiconductor datasheet?p=RGS60NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 59A TO263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/94ns
Switching Energy: 650µJ (on), 790µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Grade: Automotive
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 228 W
Qualification: AEC-Q101
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.61 EUR
10+ 7.73 EUR
25+ 7.31 EUR
100+ 6.33 EUR
250+ 6.01 EUR
500+ 5.39 EUR
Mindestbestellmenge: 3
RGS60NL65DHRBTL Hersteller : Rohm Semiconductor rgs60nl65dhrbtl-e.pdf Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
28+5.59 EUR
30+ 5.15 EUR
50+ 4.77 EUR
100+ 4.43 EUR
250+ 4.13 EUR
500+ 3.85 EUR
Mindestbestellmenge: 28
RGS60NL65DHRBTL Hersteller : Rohm Semiconductor rgs60nl65dhrbtl-e.pdf Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+7.85 EUR
Mindestbestellmenge: 20
RGS60NL65DHRBTL RGS60NL65DHRBTL Hersteller : Rohm Semiconductor datasheet?p=RGS60NL65DHRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: IGBT TRENCH FS 650V 59A TO263L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/94ns
Switching Energy: 650µJ (on), 790µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Grade: Automotive
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 228 W
Qualification: AEC-Q101
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