RGS60NL65DHRBTL ROHM
Hersteller: ROHM
Description: ROHM - RGS60NL65DHRBTL - IGBT, AEC-Q101, 59 A, 1.65 V, 228 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 228W
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 59A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
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Technische Details RGS60NL65DHRBTL ROHM
Description: IGBT TRENCH FS 650V 59A TO-263L, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/94ns, Switching Energy: 650µJ (on), 790µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 36 nC, Grade: Automotive, Current - Collector (Ic) (Max): 59 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 228 W, Qualification: AEC-Q101.
Weitere Produktangebote RGS60NL65DHRBTL nach Preis ab 4.57 EUR bis 12.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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RGS60NL65DHRBTL | ROHM Semiconductor |
IGBTs 8us Short-Circuit Tolerance, 650V 30A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS60NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification. |
auf Bestellung 2236 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS60NL65DHRBTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 59A TO-263L Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-263L IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/94ns Switching Energy: 650µJ (on), 790µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 36 nC Grade: Automotive Current - Collector (Ic) (Max): 59 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 228 W Qualification: AEC-Q101 |
auf Bestellung 309 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS60NL65DHRBTL | ROHM |
Description: ROHM - RGS60NL65DHRBTL - IGBT, AEC-Q101, 59 A, 1.65 V, 228 W, 650 V, TO-263L, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 228W Bauform - Transistor: TO-263L Dauerkollektorstrom: 59A Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS60NL65DHRBTL | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL |
auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS60NL65DHRBTL | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGS60NL65DHRBTL |
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Hersteller: ROHM Semiconductor
IGBTs 8us Short-Circuit Tolerance, 650V 30A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS60NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification.
IGBTs 8us Short-Circuit Tolerance, 650V 30A, FRD Built-in, Automotive Field Stop Trench IGBT: RGS60NL65DHRB is a 8 s SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification.
auf Bestellung 2236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.77 EUR |
| 10+ | 7.5 EUR |
| 100+ | 5.4 EUR |
| 500+ | 5.38 EUR |
| 1000+ | 4.57 EUR |
| RGS60NL65DHRBTL |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 59A TO-263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/94ns
Switching Energy: 650µJ (on), 790µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Grade: Automotive
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 228 W
Qualification: AEC-Q101
Description: IGBT TRENCH FS 650V 59A TO-263L
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/94ns
Switching Energy: 650µJ (on), 790µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Grade: Automotive
Current - Collector (Ic) (Max): 59 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 228 W
Qualification: AEC-Q101
auf Bestellung 309 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.21 EUR |
| 10+ | 7.52 EUR |
| 100+ | 5.43 EUR |
| RGS60NL65DHRBTL |
|
Hersteller: ROHM
Description: ROHM - RGS60NL65DHRBTL - IGBT, AEC-Q101, 59 A, 1.65 V, 228 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 228W
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 59A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: ROHM - RGS60NL65DHRBTL - IGBT, AEC-Q101, 59 A, 1.65 V, 228 W, 650 V, TO-263L, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 228W
Bauform - Transistor: TO-263L
Dauerkollektorstrom: 59A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 12.92 EUR |
| 28+ | 8.35 EUR |
| 100+ | 5.57 EUR |
| RGS60NL65DHRBTL |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL
Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL
auf Bestellung 940 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.21 EUR |
| 30+ | 5.87 EUR |
| 50+ | 5.52 EUR |
| 100+ | 5.21 EUR |
| 250+ | 4.97 EUR |
| 500+ | 4.77 EUR |
| RGS60NL65DHRBTL |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL
Trans IGBT Chip N-CH 650V 59A 228W Automotive 3-Pin(2+Tab) LPDL
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 8.73 EUR |