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RGS80TS65DHRC11

RGS80TS65DHRC11 ROHM Semiconductor


rgs80ts65d-e.pdf Hersteller: ROHM Semiconductor
IGBT Transistors TO247NNP 650V TRNCH 40A
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Technische Details RGS80TS65DHRC11 ROHM Semiconductor

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3, Case: TO247-3, Collector-emitter voltage: 650V, Gate-emitter voltage: ±30V, Collector current: 40A, Pulsed collector current: 120A, Turn-on time: 62ns, Turn-off time: 291ns, Type of transistor: IGBT, Power dissipation: 136W, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 48nC, Mounting: THT, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote RGS80TS65DHRC11

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RGS80TS65DHRC11 Hersteller : ROHM SEMICONDUCTOR rgs80ts65d-e.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RGS80TS65DHRC11 RGS80TS65DHRC11 Hersteller : Rohm Semiconductor rgs80ts65d-e.pdf Description: IGBT TRNCH FIELD 650V 73A TO247N
Produkt ist nicht verfügbar
RGS80TS65DHRC11 Hersteller : ROHM SEMICONDUCTOR rgs80ts65d-e.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3
Case: TO247-3
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Turn-on time: 62ns
Turn-off time: 291ns
Type of transistor: IGBT
Power dissipation: 136W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 48nC
Mounting: THT
Produkt ist nicht verfügbar