RGS80TS65DHRC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FS 650V 73A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/112ns
Switching Energy: 1.05mJ (on), 1.03mJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 48 nC
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 272 W
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.58 EUR |
| 30+ | 7.1 EUR |
| 120+ | 6.52 EUR |
| 510+ | 6.2 EUR |
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Technische Details RGS80TS65DHRC11 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 73A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/112ns, Switching Energy: 1.05mJ (on), 1.03mJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 48 nC, Current - Collector (Ic) (Max): 73 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 272 W.
Weitere Produktangebote RGS80TS65DHRC11 nach Preis ab 6.85 EUR bis 13.66 EUR
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RGS80TS65DHRC11 | Hersteller : ROHM Semiconductor |
IGBTs TO247 650V 40A TRNCH |
auf Bestellung 503 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGS80TS65DHRC11 | Hersteller : ROHM SEMICONDUCTOR |
RGS80TS65DHRC11 THT IGBT transistors |
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