auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.6 EUR |
| 10+ | 6.76 EUR |
| 100+ | 6.37 EUR |
| 450+ | 6.34 EUR |
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Technische Details RGS80TS65DHRC11 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 73A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 37ns/112ns, Switching Energy: 1.05mJ (on), 1.03mJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 48 nC, Current - Collector (Ic) (Max): 73 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 272 W.
Weitere Produktangebote RGS80TS65DHRC11 nach Preis ab 6.35 EUR bis 12.69 EUR
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RGS80TS65DHRC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FS 650V 73A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/112ns Switching Energy: 1.05mJ (on), 1.03mJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 48 nC Current - Collector (Ic) (Max): 73 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 272 W |
auf Bestellung 254 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGS80TS65DHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 136W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 48nC Kind of package: tube Turn-on time: 62ns Turn-off time: 291ns Features of semiconductor devices: integrated anti-parallel diode |
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