RGS80TSX2DHRC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorTrans IGBT Chip N-CH 1200V 80A 555000mW Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 128 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 11.77 EUR |
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Technische Details RGS80TSX2DHRC11 Rohm Semiconductor
Description: IGBT TRENCH FS 1200V 80A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 198 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 49ns/199ns, Switching Energy: 3mJ (on), 3.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 104 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 555 W.
Weitere Produktangebote RGS80TSX2DHRC11 nach Preis ab 9.06 EUR bis 21.31 EUR
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RGS80TSX2DHRC11 | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 555000mW Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS80TSX2DHRC11 | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 555000mW Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 110 Stücke: Lieferzeit 14-21 Tag (e) |
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RGS80TSX2DHRC11 | Hersteller : ROHM Semiconductor |
IGBTs IGBT Trench Field Stop 1200 V 80 A 555 W Through Hole TO-247N |
auf Bestellung 285 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS80TSX2DHRC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 1200V 80A TO-247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 198 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 49ns/199ns Switching Energy: 3mJ (on), 3.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 555 W |
auf Bestellung 638 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGS80TSX2DHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 104nC Kind of package: tube Turn-on time: 89ns Turn-off time: 629ns Features of semiconductor devices: integrated anti-parallel diode |
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