RGS80TSX2DHRC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorTrans IGBT Chip N-CH 1200V 80A 555000mW Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 13.95 EUR |
| 25+ | 12.83 EUR |
| 50+ | 11.86 EUR |
| 100+ | 11 EUR |
| 250+ | 10.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGS80TSX2DHRC11 Rohm Semiconductor
Description: IGBT TRENCH FS 1200V 80A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 198 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 49ns/199ns, Switching Energy: 3mJ (on), 3.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 104 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 555 W.
Weitere Produktangebote RGS80TSX2DHRC11 nach Preis ab 13.69 EUR bis 20.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
RGS80TSX2DHRC11 | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 1200V 80A 555000mW Automotive 3-Pin(3+Tab) TO-247N Tube |
auf Bestellung 458 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
RGS80TSX2DHRC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors 1200V 40A Field Stop Trench IGBT. RGS80TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial. |
auf Bestellung 381 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
RGS80TSX2DHRC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 1200V 80A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 198 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 49ns/199ns Switching Energy: 3mJ (on), 3.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 555 W |
auf Bestellung 359 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| RGS80TSX2DHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 104nC Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| RGS80TSX2DHRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 104nC Mounting: THT |
Produkt ist nicht verfügbar |