RGS80TSX2HRC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorTrans IGBT Chip N-CH 1200V 80A 555000mW Automotive 3-Pin(3+Tab) TO-247N Tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 10.98 EUR |
| 25+ | 10.13 EUR |
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Technische Details RGS80TSX2HRC11 Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 80A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 49ns/199ns, Switching Energy: 3mJ (on), 3.1mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 104 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 555 W.
Weitere Produktangebote RGS80TSX2HRC11 nach Preis ab 12.16 EUR bis 18.11 EUR
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RGS80TSX2HRC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FLD 1200V 80A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 49ns/199ns Switching Energy: 3mJ (on), 3.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 104 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 555 W |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS80TSX2HRC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors 1200V 40A Field Stop Trench IGBT. RGS80TSX2HR is a highly reliable IGBT for automotive inverter, heater. |
auf Bestellung 450 Stücke: Lieferzeit 201-205 Tag (e) |
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| RGS80TSX2HRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Mounting: THT Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Gate charge: 104nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGS80TSX2HRC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Mounting: THT Turn-on time: 89ns Turn-off time: 629ns Type of transistor: IGBT Power dissipation: 277W Kind of package: tube Gate charge: 104nC Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A |
Produkt ist nicht verfügbar |