RGT00TS65DGC11 Rohm Semiconductor

Description: 650V 50A FIELD STOP TRENCH IGBT, Power - Max: 277 W, Current - Collector Pulsed (Icm): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 85 A, Part Status: Not For New Designs, Gate Charge: 94 nC, Test Condition: 400V, 50A, 10Ohm, 15V, Td (on/off) @ 25°C: 42ns/137ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Reverse Recovery Time (trr): 54 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.