RGT16BM65DTL Rohm Semiconductor
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 114+ | 1.30 EUR |
| 120+ | 1.20 EUR |
| 250+ | 1.11 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.95 EUR |
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Technische Details RGT16BM65DTL Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: TO-252, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/33ns, Test Condition: 400V, 8A, 10Ohm, 15V, Gate Charge: 21 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 94 W.
Weitere Produktangebote RGT16BM65DTL nach Preis ab 1.15 EUR bis 4.52 EUR
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RGT16BM65DTL | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FS 650V 16A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16BM65DTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT16BM65DTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2488 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT16BM65DTL | Hersteller : ROHM Semiconductor |
IGBTs ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
auf Bestellung 6075 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16BM65DTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 9390 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16BM65DTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGT16BM65DTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 47W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 24A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 170ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT16BM65DTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 47W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 24A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 170ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |