RGT16BM65DTL Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 114+ | 1.51 EUR |
| 120+ | 1.43 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.2 EUR |
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Technische Details RGT16BM65DTL Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: TO-252, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/33ns, Test Condition: 400V, 8A, 10Ohm, 15V, Gate Charge: 21 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 94 W.
Weitere Produktangebote RGT16BM65DTL nach Preis ab 1.52 EUR bis 5.65 EUR
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RGT16BM65DTL | Rohm Semiconductor |
 Description: IGBT TRENCH FS 650V 16A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16BM65DTL | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT16BM65DTL | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2488 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT16BM65DTL | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 47W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 24A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 27ns Turn-off time: 170ns |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT16BM65DTL | ROHM Semiconductor |
IGBTs 5 s Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT |
auf Bestellung 5528 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16BM65DTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 8974 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16BM65DTL | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 98 Stücke Im Einkaufswagen Stück im Wert von UAH |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.73 EUR |
| 5000+ | 1.62 EUR |
| RGT16BM65DTL |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 98+ | 1.99 EUR |
| RGT16BM65DTL |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2488 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 54+ | 3.22 EUR |
| 58+ | 2.94 EUR |
| 100+ | 2.24 EUR |
| 200+ | 2.07 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.59 EUR |
| 2000+ | 1.52 EUR |
| RGT16BM65DTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 47W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 27ns
Turn-off time: 170ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 8A
Power dissipation: 47W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 27ns
Turn-off time: 170ns
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 4.05 EUR |
| 33+ | 2.62 EUR |
| RGT16BM65DTL |
|
Hersteller: ROHM Semiconductor
IGBTs 5 s Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT
IGBTs 5 s Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-252, Field Stop Trench IGBT
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.57 EUR |
| 10+ | 3.62 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.95 EUR |
| 2500+ | 1.83 EUR |
| RGT16BM65DTL |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 8974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.65 EUR |
| 10+ | 3.67 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.05 EUR |
| 1000+ | 1.98 EUR |
| RGT16BM65DTL |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) DPAK T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)