Technische Details RGT16NS65DGTL Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/33ns, Test Condition: 400V, 8A, 10Ohm, 15V, Gate Charge: 21 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 94 W.
Weitere Produktangebote RGT16NS65DGTL nach Preis ab 1.34 EUR bis 4.86 EUR
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RGT16NS65DGTL | Rohm Semiconductor |
 Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) LPDS T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT16NS65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 16A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 918 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16NS65DGTL | ROHM Semiconductor |
IGBTs 650V 8A IGBT Stop Trench |
auf Bestellung 1447 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RGT16NS65DGTL |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) LPDS T/R
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) LPDS T/R
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 2.8 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.34 EUR |
| RGT16NS65DGTL |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
Description: IGBT TRENCH FS 650V 16A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
auf Bestellung 918 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.8 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.7 EUR |
| RGT16NS65DGTL |
|
Hersteller: ROHM Semiconductor
IGBTs 650V 8A IGBT Stop Trench
IGBTs 650V 8A IGBT Stop Trench
auf Bestellung 1447 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.86 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.63 EUR |
| 2000+ | 1.52 EUR |