RGT16NS65DGTL Rohm Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 106+ | 1.41 EUR |
| 110+ | 1.30 EUR |
| 250+ | 1.20 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.03 EUR |
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Technische Details RGT16NS65DGTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 16A LPDS, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/33ns, Test Condition: 400V, 8A, 10Ohm, 15V, Gate Charge: 21 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 94 W.
Weitere Produktangebote RGT16NS65DGTL nach Preis ab 1.27 EUR bis 3.80 EUR
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RGT16NS65DGTL | Hersteller : Rohm Semiconductor |
 Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) LPDS T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT16NS65DGTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 16A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16NS65DGTL | Hersteller : ROHM Semiconductor |
IGBTs 650V 8A IGBT Stop Trench |
auf Bestellung 1592 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT16NS65DGTL | Hersteller : Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 16A 94000mW 3-Pin(2+Tab) LPDS T/R |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGT16NS65DGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; LPDS Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 24A Turn-on time: 27ns Turn-off time: 170ns Type of transistor: IGBT Power dissipation: 47W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 21nC Mounting: SMD Case: LPDS Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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RGT16NS65DGTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 16A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
Produkt ist nicht verfügbar |
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| RGT16NS65DGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; LPDS Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Collector current: 8A Pulsed collector current: 24A Turn-on time: 27ns Turn-off time: 170ns Type of transistor: IGBT Power dissipation: 47W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 21nC Mounting: SMD Case: LPDS |
Produkt ist nicht verfügbar |