RGT30NS65DGC9 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FS 650V 30A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-262
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 133 W
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.05 EUR |
| 50+ | 2.56 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.99 EUR |
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Technische Details RGT30NS65DGC9 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 30A TO-262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: TO-262, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/64ns, Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 32 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 133 W.
Weitere Produktangebote RGT30NS65DGC9 nach Preis ab 2.24 EUR bis 5.84 EUR
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RGT30NS65DGC9 | Hersteller : ROHM Semiconductor |
IGBTs 5s Short-Circuit Tolerance, 650V 15A, FRD Built-in, TO-262, Field Stop Trench IGBT |
auf Bestellung 889 Stücke: Lieferzeit 10-14 Tag (e) |
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