RGT30NS65DGC9 Rohm Semiconductor

Description: IGBT TRENCH FS 650V 30A TO-262, Power - Max: 133 W, Current - Collector Pulsed (Icm): 45 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 30 A, Part Status: Active, Gate Charge: 32 nC, Test Condition: 400V, 15A, 10Ohm, 15V, Td (on/off) @ 25°C: 18ns/64ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-262, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Reverse Recovery Time (trr): 55 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.