RGT30NS65DGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FIELD 650V 30A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 32 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 133 W
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 10+ | 3.10 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.73 EUR |
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Technische Details RGT30NS65DGTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 30A LPDS, Packaging: Cut Tape (CT), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 55 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/64ns, Test Condition: 400V, 15A, 10Ohm, 15V, Gate Charge: 32 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 133 W.
Weitere Produktangebote RGT30NS65DGTL nach Preis ab 1.63 EUR bis 4.84 EUR
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RGT30NS65DGTL | Hersteller : ROHM Semiconductor |
IGBTs 650V 15A IGBT Stop Trench |
auf Bestellung 852 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT30NS65DGTL | Hersteller : ROHM |
Description: ROHM - RGT30NS65DGTL - IGBT, Trench, Leuchtfeldblende, 30 A, 1.65 V, 133 W, 650 V, TO-263S, 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 133W Bauform - Transistor: TO-263S Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 30A SVHC: Lead (23-Jan-2024) |
auf Bestellung 992 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT30NS65DGTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 30A LPDS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 55 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/64ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 133 W |
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