RGT50NL65DGTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
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Technische Details RGT50NL65DGTL Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: LPDS, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 194 W.
Weitere Produktangebote RGT50NL65DGTL nach Preis ab 2.98 EUR bis 8.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RGT50NL65DGTL | ROHM |
Description: ROHM - RGT50NL65DGTL - IGBT, 48 A, 1.65 V, 194 W, 650 V, TO-263 (D2PAK), 3 Pin(s) Kollektor-Emitter-Sättigungsspannung: 1.65 MSL: MSL 1 - unbegrenzt Verlustleistung: 194 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 650 Betriebstemperatur, max.: 175 Kollektorstrom: 48 SVHC: Lead (08-Jul-2021) |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT50NL65DGTL | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 48A LPDS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: LPDS IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
auf Bestellung 1357 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT50NL65DGTL | ROHM Semiconductor |
IGBTs 5us Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT |
auf Bestellung 1095 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGT50NL65DGTL |
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Hersteller: ROHM
Description: ROHM - RGT50NL65DGTL - IGBT, 48 A, 1.65 V, 194 W, 650 V, TO-263 (D2PAK), 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 1.65
MSL: MSL 1 - unbegrenzt
Verlustleistung: 194
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650
Betriebstemperatur, max.: 175
Kollektorstrom: 48
SVHC: Lead (08-Jul-2021)
Description: ROHM - RGT50NL65DGTL - IGBT, 48 A, 1.65 V, 194 W, 650 V, TO-263 (D2PAK), 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 1.65
MSL: MSL 1 - unbegrenzt
Verlustleistung: 194
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650
Betriebstemperatur, max.: 175
Kollektorstrom: 48
SVHC: Lead (08-Jul-2021)
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 5.7 EUR |
| 52+ | 4.55 EUR |
| RGT50NL65DGTL |
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Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
Description: IGBT TRENCH FS 650V 48A LPDS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: LPDS
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 194 W
auf Bestellung 1357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.96 EUR |
| 10+ | 5.26 EUR |
| 100+ | 3.72 EUR |
| 500+ | 3.44 EUR |
| RGT50NL65DGTL |
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Hersteller: ROHM Semiconductor
IGBTs 5us Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT
IGBTs 5us Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT
auf Bestellung 1095 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.07 EUR |
| 10+ | 5.34 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.5 EUR |
| 1000+ | 2.98 EUR |