RGT50NS65DGC9 ROHM Semiconductor
Hersteller: ROHM SemiconductorIGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.27 EUR |
| 10+ | 5.63 EUR |
| 50+ | 5.44 EUR |
| 100+ | 4.61 EUR |
| 500+ | 3.91 EUR |
| 1000+ | 3.34 EUR |
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Technische Details RGT50NS65DGC9 ROHM Semiconductor
Description: IGBT TRENCH FIELD 650V 48A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-262, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 194 W.
Weitere Produktangebote RGT50NS65DGC9 nach Preis ab 4.36 EUR bis 6.97 EUR
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RGT50NS65DGC9 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 48A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 194 W |
auf Bestellung 953 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT50NS65DGC9 | Hersteller : ROHM |
Description: ROHM - RGT50NS65DGC9 - IGBT, 48 A, 1.65 V, 194 W, 650 V, TO-262, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 194W Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 48A SVHC: Lead (17-Jan-2023) |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGT50NS65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT50NS65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 97W; TO262 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 97W Case: TO262 Gate-emitter voltage: ±30V Pulsed collector current: 75A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 210ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |