RGT50TM65DGC9 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 21A TO220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 47 W
| Anzahl | Preis |
|---|---|
| 3+ | 7.22 EUR |
| 50+ | 3.72 EUR |
| 100+ | 3.38 EUR |
| 500+ | 2.78 EUR |
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Technische Details RGT50TM65DGC9 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 21A TO220NFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-220NFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 21 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 47 W.
Weitere Produktangebote RGT50TM65DGC9 nach Preis ab 2.8 EUR bis 7.3 EUR
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RGT50TM65DGC9 | Hersteller : ROHM Semiconductor |
IGBTs 5s Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT |
auf Bestellung 963 Stücke: Lieferzeit 10-14 Tag (e) |
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