RGT50TM65DGC9 ROHM Semiconductor
Hersteller: ROHM SemiconductorIGBT Transistors RGT50TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
auf Bestellung 1000 Stücke:
Lieferzeit 202-206 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.65 EUR |
| 10+ | 4.75 EUR |
| 50+ | 2.75 EUR |
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Technische Details RGT50TM65DGC9 ROHM Semiconductor
Description: IGBT TRNCH FLD 650V 21A TO220NFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-220NFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 21 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 47 W.
Weitere Produktangebote RGT50TM65DGC9 nach Preis ab 3.44 EUR bis 5.68 EUR
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RGT50TM65DGC9 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FLD 650V 21A TO220NFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 47 W |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGT50TM65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Collector-emitter voltage: 650V Power dissipation: 23W Gate charge: 49nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 65ns Kind of package: tube Case: TO220NFM Turn-off time: 210ns Gate-emitter voltage: ±30V Collector current: 13A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGT50TM65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Collector-emitter voltage: 650V Power dissipation: 23W Gate charge: 49nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 65ns Kind of package: tube Case: TO220NFM Turn-off time: 210ns Gate-emitter voltage: ±30V Collector current: 13A Mounting: SMD |
Produkt ist nicht verfügbar |