RGT50TM65DGC9 ROHM Semiconductor
Hersteller: ROHM SemiconductorIGBTs RGT50TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
auf Bestellung 994 Stücke:
Lieferzeit 164-168 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.98 EUR |
| 25+ | 3.15 EUR |
| 100+ | 2.75 EUR |
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Technische Details RGT50TM65DGC9 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 21A TO220NFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-220NFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Active, Current - Collector (Ic) (Max): 21 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 47 W.
Weitere Produktangebote RGT50TM65DGC9 nach Preis ab 2.72 EUR bis 7.04 EUR
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RGT50TM65DGC9 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 21A TO220NFM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-220NFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/88ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 49 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 75 A Power - Max: 47 W |
auf Bestellung 864 Stücke: Lieferzeit 10-14 Tag (e) |
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| RGT50TM65DGC9 | Hersteller : ROHM SEMICONDUCTOR |
RGT50TM65DGC9 SMD IGBT transistors |
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