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RGT50TS65DGC11

RGT50TS65DGC11 Rohm Semiconductor

rgt50ts65d-e.pdf Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 48A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
auf Bestellung 431 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.68 EUR
10+ 7.81 EUR
100+ 6.4 EUR
Mindestbestellmenge: 3
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Technische Details RGT50TS65DGC11 Rohm Semiconductor

Description: IGBT TRNCH FIELD 650V 48A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/88ns, Test Condition: 400V, 25A, 10Ohm, 15V, Gate Charge: 49 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 174 W.

Weitere Produktangebote RGT50TS65DGC11 nach Preis ab 5.41 EUR bis 9.23 EUR

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RGT50TS65DGC11 RGT50TS65DGC11 Hersteller : ROHM Semiconductor rgt50ts65d-e-1872040.pdf IGBT Transistors 650V 25A IGBT Stop Trench
auf Bestellung 290 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.23 EUR
10+ 7.75 EUR
25+ 7.31 EUR
100+ 6.27 EUR
250+ 5.93 EUR
450+ 5.56 EUR
900+ 5.41 EUR
Mindestbestellmenge: 6
RGT50TS65DGC11 RGT50TS65DGC11 Hersteller : Rohm Semiconductor rgt50ts65d-e.pdf Trans IGBT Chip N-CH 650V 48A 174000mW 3-Pin(3+Tab) TO-247N Bulk
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
RGT50TS65DGC11 RGT50TS65DGC11 Hersteller : Rohm Semiconductor rgt50ts65d-e.pdf Description: IGBT TRNCH FIELD 650V 48A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 49 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 174 W
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