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RGT80TS65DGC11

RGT80TS65DGC11 Rohm Semiconductor

rgt80ts65d-e.pdf Hersteller: Rohm Semiconductor
Description: IGBT 650V 70A 234W TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/119ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 234 W
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Lieferzeit 21-28 Tag (e)
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3+11 EUR
Mindestbestellmenge: 3
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Technische Details RGT80TS65DGC11 Rohm Semiconductor

Description: IGBT 650V 70A 234W TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 34ns/119ns, Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 79 nC, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 234 W.

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RGT80TS65DGC11 RGT80TS65DGC11 Hersteller : ROHM Semiconductor rgt80ts65d_e-1871791.pdf IGBT Transistors 650V 40A IGBT Stop Trench
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