RGT8BM65DGTL1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: SHORT-CIRCUIT TOLERANCE, 650V 4A
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
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Technische Details RGT8BM65DGTL1 Rohm Semiconductor
Description: SHORT-CIRCUIT TOLERANCE, 650V 4A, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-252GE, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/69ns, Test Condition: 400V, 4A, 50Ohm, 15V, Gate Charge: 13.5 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 62 W.
Weitere Produktangebote RGT8BM65DGTL1 nach Preis ab 1.19 EUR bis 5.34 EUR
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RGT8BM65DGTL1 | ROHM Semiconductor |
IGBT Transistors 5us Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT8BM65DGTL1 | Rohm Semiconductor |
Description: SHORT-CIRCUIT TOLERANCE, 650V 4APackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-252GE IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 62 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT8BM65DGTL1 | ROHM |
Description: ROHM - RGT8BM65DGTL1 - IGBT, 12 A, 1.65 V, 62 W, 650 V, TO-252GE, 3 Pin(s)tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 62W Bauform - Transistor: TO-252GE Dauerkollektorstrom: 12A Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
auf Bestellung 2492 Stücke: Lieferzeit 14-21 Tag (e) |
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RGT8BM65DGTL1 | ROHM |
Description: ROHM - RGT8BM65DGTL1 - IGBT, 12 A, 1.65 V, 62 W, 650 V, TO-252GE, 3 Pin(s)tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 62W Bauform - Transistor: TO-252GE Dauerkollektorstrom: 12A Anzahl der Pins: 3Pin(s) Produktpalette: Field Stop Trench Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C SVHC: To Be Advised |
auf Bestellung 2492 Stücke: Lieferzeit 14-21 Tag (e) |
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| RGT8BM65DGTL1 |
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Hersteller: ROHM Semiconductor
IGBT Transistors 5us Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT
IGBT Transistors 5us Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-252, Field Stop Trench IGBT
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.32 EUR |
| 2500+ | 1.25 EUR |
| 5000+ | 1.19 EUR |
| RGT8BM65DGTL1 |
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Hersteller: Rohm Semiconductor
Description: SHORT-CIRCUIT TOLERANCE, 650V 4A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
Description: SHORT-CIRCUIT TOLERANCE, 650V 4A
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252GE
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 10+ | 2.67 EUR |
| 25+ | 2.53 EUR |
| 100+ | 2.08 EUR |
| 250+ | 1.94 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.36 EUR |
| RGT8BM65DGTL1 |
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Hersteller: ROHM
Description: ROHM - RGT8BM65DGTL1 - IGBT, 12 A, 1.65 V, 62 W, 650 V, TO-252GE, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 62W
Bauform - Transistor: TO-252GE
Dauerkollektorstrom: 12A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: ROHM - RGT8BM65DGTL1 - IGBT, 12 A, 1.65 V, 62 W, 650 V, TO-252GE, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 62W
Bauform - Transistor: TO-252GE
Dauerkollektorstrom: 12A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 3.18 EUR |
| 106+ | 2.02 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.44 EUR |
| RGT8BM65DGTL1 |
![]() |
Hersteller: ROHM
Description: ROHM - RGT8BM65DGTL1 - IGBT, 12 A, 1.65 V, 62 W, 650 V, TO-252GE, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 62W
Bauform - Transistor: TO-252GE
Dauerkollektorstrom: 12A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
Description: ROHM - RGT8BM65DGTL1 - IGBT, 12 A, 1.65 V, 62 W, 650 V, TO-252GE, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 62W
Bauform - Transistor: TO-252GE
Dauerkollektorstrom: 12A
Anzahl der Pins: 3Pin(s)
Produktpalette: Field Stop Trench Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: To Be Advised
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 47+ | 5.34 EUR |
| 73+ | 3.18 EUR |
| 106+ | 2.02 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.44 EUR |


