RGT8BM65DTL Rohm Semiconductor

Description: IGBT TRENCH FIELD 650V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-252, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/69ns, Test Condition: 400V, 4A, 50Ohm, 15V, Gate Charge: 13.5 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 62 W.