RGT8BM65DTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FIELD 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 62 W
auf Bestellung 2140 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.59 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.37 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.70 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGT8BM65DTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-252, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/69ns, Test Condition: 400V, 4A, 50Ohm, 15V, Gate Charge: 13.5 nC, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 62 W.
Weitere Produktangebote RGT8BM65DTL nach Preis ab 1.62 EUR bis 3.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RGT8BM65DTL | Hersteller : ROHM Semiconductor |
IGBTs 650V 4A IGBT Stop Trench |
auf Bestellung 2157 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| RGT8BM65DTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 31W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 31W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 12A Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Turn-on time: 54ns Turn-off time: 158ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
RGT8BM65DTL | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 8A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 62 W |
Produkt ist nicht verfügbar |
|||||||||||||
| RGT8BM65DTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 31W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 8A Power dissipation: 31W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 12A Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Turn-on time: 54ns Turn-off time: 158ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |