RGT8NS65DGC9 ROHM Semiconductor
Hersteller: ROHM Semiconductor
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.5 EUR |
10+ | 3.15 EUR |
50+ | 2.96 EUR |
100+ | 2.52 EUR |
500+ | 2.06 EUR |
1000+ | 1.71 EUR |
2500+ | 1.62 EUR |
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Technische Details RGT8NS65DGC9 ROHM Semiconductor
Description: IGBT TRENCH FIELD 650V 8A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-262, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/69ns, Test Condition: 400V, 4A, 50Ohm, 15V, Gate Charge: 13.5 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 65 W.
Weitere Produktangebote RGT8NS65DGC9 nach Preis ab 2.3 EUR bis 3.89 EUR
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RGT8NS65DGC9 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 8A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: TO-262 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/69ns Test Condition: 400V, 4A, 50Ohm, 15V Gate Charge: 13.5 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 12 A Power - Max: 65 W |
auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
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RGT8NS65DGC9 | Hersteller : ROHM |
Description: ROHM - RGT8NS65DGC9 - IGBT, 8 A, 1.65 V, 65 W, 650 V, TO-262, 3 Pin(s) MSL: MSL 1 - unbegrenzt Kollektor-Emitter-Sättigungsspannung Vce(on): 1.65 Verlustleistung Pd: 65 Bauform - Transistor: TO-262 Kollektor-Emitter-Spannung V(br)ceo: 650 Anzahl der Pins: 3 Produktpalette: - DC-Kollektorstrom: 8 Betriebstemperatur, max.: 175 SVHC: Lead (08-Jul-2021) |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |