RGT8TM65DGC9 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FS 650V 5A TO-220NFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: TO-220NFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/69ns
Test Condition: 400V, 4A, 50Ohm, 15V
Gate Charge: 13.5 nC
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 16 W
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.31 EUR |
| 50+ | 1.09 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.76 EUR |
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Technische Details RGT8TM65DGC9 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 5A TO-220NFM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: TO-220NFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/69ns, Test Condition: 400V, 4A, 50Ohm, 15V, Gate Charge: 13.5 nC, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 16 W.
Weitere Produktangebote RGT8TM65DGC9 nach Preis ab 1.43 EUR bis 3.24 EUR
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RGT8TM65DGC9 | Hersteller : ROHM Semiconductor |
IGBTs RGT8TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder. |
auf Bestellung 751 Stücke: Lieferzeit 10-14 Tag (e) |
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