RGTH00TS65DGC11 ROHM Semiconductor
auf Bestellung 391 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 13.42 EUR |
| 10+ | 11.26 EUR |
| 25+ | 10.63 EUR |
| 100+ | 9.13 EUR |
| 250+ | 8.61 EUR |
| 450+ | 8.11 EUR |
| 900+ | 7.96 EUR |
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Technische Details RGTH00TS65DGC11 ROHM Semiconductor
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3, Mounting: THT, Kind of package: tube, Case: TO247-3, Pulsed collector current: 200A, Turn-on time: 102ns, Turn-off time: 221ns, Type of transistor: IGBT, Power dissipation: 138W, Gate-emitter voltage: ±30V, Collector-emitter voltage: 650V, Collector current: 50A, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 94nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote RGTH00TS65DGC11
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RGTH00TS65DGC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRNCH FIELD 650V 85A TO247N |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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| RGTH00TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 200A Turn-on time: 102ns Turn-off time: 221ns Type of transistor: IGBT Power dissipation: 138W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 94nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RGTH00TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 138W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 200A Turn-on time: 102ns Turn-off time: 221ns Type of transistor: IGBT Power dissipation: 138W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 50A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 94nC |
Produkt ist nicht verfügbar |