
RGTH00TS65GC13 Rohm Semiconductor

Description: IGBT TRENCH FIELD 650V 85A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 39ns/143ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 277 W
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 3.98 EUR |
30+ | 2.17 EUR |
120+ | 1.83 EUR |
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Technische Details RGTH00TS65GC13 Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 85A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 39ns/143ns, Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 94 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 277 W.
Weitere Produktangebote RGTH00TS65GC13 nach Preis ab 4.72 EUR bis 5.81 EUR
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RGTH00TS65GC13 | Hersteller : ROHM Semiconductor |
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auf Bestellung 869 Stücke: Lieferzeit 10-14 Tag (e) |
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