Produkte > ROHM SEMICONDUCTOR > RGTH40TK65DGC11
RGTH40TK65DGC11

RGTH40TK65DGC11 Rohm Semiconductor


datasheet?p=RGTH40TK65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 23A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/73ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 56 W
auf Bestellung 440 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.22 EUR
30+ 7.31 EUR
120+ 6.27 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details RGTH40TK65DGC11 Rohm Semiconductor

Description: IGBT TRNCH FIELD 650V 23A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/73ns, Test Condition: 400V, 20A, 10Ohm, 15V, Gate Charge: 40 nC, Part Status: Active, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 56 W.

Weitere Produktangebote RGTH40TK65DGC11

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RGTH40TK65DGC11 RGTH40TK65DGC11 Hersteller : ROHM Semiconductor ROHM_S_A0001435830_1-2576538.pdf IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)