auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.11 EUR |
| 10+ | 4 EUR |
| 100+ | 3.54 EUR |
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Technische Details RGTH40TS65DGC11 ROHM Semiconductor
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 20A, Power dissipation: 72W, Case: TO247-3, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Mounting: THT, Gate charge: 40nC, Kind of package: tube, Turn-on time: 47ns, Turn-off time: 141ns, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote RGTH40TS65DGC11
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| RGTH40TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 72W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 40nC Kind of package: tube Turn-on time: 47ns Turn-off time: 141ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RGTH40TS65DGC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 40A TO247N |
Produkt ist nicht verfügbar |
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| RGTH40TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 72W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 40nC Kind of package: tube Turn-on time: 47ns Turn-off time: 141ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |