RGTH40TS65DGC11 ROHM Semiconductor
auf Bestellung 31 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.33 EUR |
| 10+ | 6.6 EUR |
| 25+ | 6.24 EUR |
| 100+ | 5.41 EUR |
| 450+ | 4.58 EUR |
| 900+ | 3.77 EUR |
| 2700+ | 3.64 EUR |
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Technische Details RGTH40TS65DGC11 ROHM Semiconductor
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3, Mounting: THT, Kind of package: tube, Case: TO247-3, Pulsed collector current: 80A, Turn-on time: 47ns, Turn-off time: 141ns, Type of transistor: IGBT, Power dissipation: 72W, Gate-emitter voltage: ±30V, Collector-emitter voltage: 650V, Collector current: 20A, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 40nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote RGTH40TS65DGC11
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| RGTH40TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 80A Turn-on time: 47ns Turn-off time: 141ns Type of transistor: IGBT Power dissipation: 72W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 20A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RGTH40TS65DGC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 40A TO247N |
Produkt ist nicht verfügbar |
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| RGTH40TS65DGC11 | Hersteller : ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 72W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 80A Turn-on time: 47ns Turn-off time: 141ns Type of transistor: IGBT Power dissipation: 72W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 20A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 40nC |
Produkt ist nicht verfügbar |