RGTH60TK65DGC11 ROHM Semiconductor
Hersteller: ROHM SemiconductorIGBTs ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.05 EUR |
| 25+ | 5.02 EUR |
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Technische Details RGTH60TK65DGC11 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 28A TO-3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/105ns, Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Part Status: Active, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 61 W.
Weitere Produktangebote RGTH60TK65DGC11 nach Preis ab 2.79 EUR bis 6.25 EUR
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RGTH60TK65DGC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 28A TO-3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Active Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 61 W |
auf Bestellung 403 Stücke: Lieferzeit 10-14 Tag (e) |
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