RGTH60TK65DGC11 ROHM
Hersteller: ROHM
Description: ROHM - RGTH60TK65DGC11 - IGBT, 28 A, 1.6 V, 61 W, 650 V, TO-3PFM, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung: 1.6
MSL: MSL 1 - unbegrenzt
Verlustleistung: 61
Bauform - Transistor: TO-3PFM
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650
Betriebstemperatur, max.: 175
Kollektorstrom: 28
SVHC: Lead (10-Jun-2022)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 6.27 EUR |
| 43+ | 5.4 EUR |
| 100+ | 4.58 EUR |
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Technische Details RGTH60TK65DGC11 ROHM
Description: IGBT TRENCH FS 650V 28A TO-3PFM, Power - Max: 61 W, Current - Collector Pulsed (Icm): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 28 A, Part Status: Active, Gate Charge: 58 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Td (on/off) @ 25°C: 27ns/105ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PFM, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Reverse Recovery Time (trr): 58 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3PFM, SC-93-3, Packaging: Tube.
Weitere Produktangebote RGTH60TK65DGC11 nach Preis ab 3.32 EUR bis 7.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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RGTH60TK65DGC11 | ROHM Semiconductor |
IGBTs High-Speed Switching Type, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
auf Bestellung 430 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH60TK65DGC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 650V 28A TO-3PFM Power - Max: 61 W Current - Collector Pulsed (Icm): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 28 A Part Status: Active Gate Charge: 58 nC Test Condition: 400V, 30A, 10Ohm, 15V Td (on/off) @ 25°C: 27ns/105ns IGBT Type: Trench Field Stop Supplier Device Package: TO-3PFM Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Reverse Recovery Time (trr): 58 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Packaging: Tube |
auf Bestellung 403 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RGTH60TK65DGC11 |
|
Hersteller: ROHM Semiconductor
IGBTs High-Speed Switching Type, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
IGBTs High-Speed Switching Type, 650V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.7 EUR |
| 10+ | 5.53 EUR |
| RGTH60TK65DGC11 |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 28A TO-3PFM
Power - Max: 61 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 28 A
Part Status: Active
Gate Charge: 58 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C: 27ns/105ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PFM
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 58 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Packaging: Tube
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.44 EUR |
| 30+ | 4.06 EUR |
| 120+ | 3.32 EUR |