RGTH60TS65DGC11 Rohm Semiconductor
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 4.24 EUR |
| 50+ | 3.93 EUR |
| 100+ | 3.66 EUR |
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Technische Details RGTH60TS65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 58A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/105ns, Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 194 W.
Weitere Produktangebote RGTH60TS65DGC11 nach Preis ab 5.83 EUR bis 8.58 EUR
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RGTH60TS65DGC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRNCH FIELD 650V 58A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 194 W |
auf Bestellung 448 Stücke: Lieferzeit 21-28 Tag (e) |
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RGTH60TS65DGC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors 650V 30A IGBT Stop Trench |
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