RGTH60TS65GC11 Rohm Semiconductor
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 51+ | 2.87 EUR |
| 53+ | 2.66 EUR |
| 100+ | 2.48 EUR |
| 250+ | 2.31 EUR |
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Technische Details RGTH60TS65GC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 58A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/105ns, Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 58 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 197 W.
Weitere Produktangebote RGTH60TS65GC11 nach Preis ab 2.31 EUR bis 7.92 EUR
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RGTH60TS65GC11 | Hersteller : Rohm Semiconductor |
 Trans IGBT Chip N-CH 650V 58A 194000mW 3-Pin(3+Tab) TO-247N Bulk |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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RGTH60TS65GC11 | Hersteller : ROHM Semiconductor |
IGBTs 650V 30A IGBT Stop Trench |
auf Bestellung 218 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH60TS65GC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 58A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 197 W |
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