RGTH80TS65GC11 ROHM Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.38 EUR |
| 10+ | 6.24 EUR |
| 100+ | 4.36 EUR |
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Technische Details RGTH80TS65GC11 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 70A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 34ns/120ns, Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 79 nC, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 234 W.
Weitere Produktangebote RGTH80TS65GC11 nach Preis ab 6.35 EUR bis 9.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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RGTH80TS65GC11 | Rohm Semiconductor |
 Description: IGBT TRENCH FS 650V 70A TO-247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/120ns Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 234 W |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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RGTH80TS65GC11 | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 70A 234000mW 3-Pin(3+Tab) TO-247N Bulk |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 19 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||
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RGTH80TS65GC11 | Rohm Semiconductor |
Trans IGBT Chip N-CH 650V 70A 234000mW 3-Pin(3+Tab) TO-247N Bulk |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RGTH80TS65GC11 |
|
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 70A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
Description: IGBT TRENCH FS 650V 70A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/120ns
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 234 W
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.56 EUR |
| 10+ | 6.35 EUR |
| RGTH80TS65GC11 |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 70A 234000mW 3-Pin(3+Tab) TO-247N Bulk
Trans IGBT Chip N-CH 650V 70A 234000mW 3-Pin(3+Tab) TO-247N Bulk
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| RGTH80TS65GC11 |
|
Hersteller: Rohm Semiconductor
Trans IGBT Chip N-CH 650V 70A 234000mW 3-Pin(3+Tab) TO-247N Bulk
Trans IGBT Chip N-CH 650V 70A 234000mW 3-Pin(3+Tab) TO-247N Bulk
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)