RGTV00TK65DGC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRNCH FIELD 650V 45A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 41ns/142ns
Switching Energy: 1.17mJ (on), 940µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 94 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 12.04 EUR |
| 10+ | 10.32 EUR |
| 450+ | 7.59 EUR |
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Technische Details RGTV00TK65DGC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 45A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 102 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 41ns/142ns, Switching Energy: 1.17mJ (on), 940µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 104 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 94 W.
Weitere Produktangebote RGTV00TK65DGC11 nach Preis ab 6.56 EUR bis 12.13 EUR
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RGTV00TK65DGC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors 650V 50A TO-3PFM Field Stp Trnch IGBT |
auf Bestellung 456 Stücke: Lieferzeit 10-14 Tag (e) |
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