RGTV00TK65DGC11 ROHM Semiconductor
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.71 EUR |
| 10+ | 6.71 EUR |
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Technische Details RGTV00TK65DGC11 ROHM Semiconductor
Description: IGBT TRENCH FS 650V 45A TO-3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 102 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 41ns/142ns, Switching Energy: 1.17mJ (on), 940µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 104 nC, Part Status: Active, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 94 W.
Weitere Produktangebote RGTV00TK65DGC11 nach Preis ab 6.46 EUR bis 10.26 EUR
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RGTV00TK65DGC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRENCH FS 650V 45A TO-3PFMPackaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 102 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 41ns/142ns Switching Energy: 1.17mJ (on), 940µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 94 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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