RGTV60TK65DGVC11 ROHM Semiconductor
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.25 EUR |
| 10+ | 6.14 EUR |
| 25+ | 6.11 EUR |
| 100+ | 6.07 EUR |
| 250+ | 6.00 EUR |
| 450+ | 5.40 EUR |
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Technische Details RGTV60TK65DGVC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/105ns, Switching Energy: 570µJ (on), 500µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 33 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 76 W.
Weitere Produktangebote RGTV60TK65DGVC11
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| RGTV60TK65DGVC11 | Hersteller : ROHM SEMICONDUCTOR |
 RGTV60TK65DGVC11 THT IGBT transistors |
Produkt ist nicht verfügbar |
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RGTV60TK65DGVC11 | Hersteller : Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 33A TO3PFM Packaging: Tube Package / Case: TO-3PFM, SC-93-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-3PFM IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 33 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 76 W |
Produkt ist nicht verfügbar |