RGTV60TK65GVC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRNCH FIELD 650V 33A TO3PFM
Packaging: Tube
Package / Case: TO-3PFM, SC-93-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-3PFM
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/105ns
Switching Energy: 570µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 76 W
auf Bestellung 436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.41 EUR |
| 30+ | 5.08 EUR |
| 120+ | 4.35 EUR |
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Technische Details RGTV60TK65GVC11 Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 33A TO3PFM, Packaging: Tube, Package / Case: TO-3PFM, SC-93-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-3PFM, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/105ns, Switching Energy: 570µJ (on), 500µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 33 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 76 W.
Weitere Produktangebote RGTV60TK65GVC11 nach Preis ab 4.49 EUR bis 6.48 EUR
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RGTV60TK65GVC11 | Hersteller : ROHM Semiconductor |
IGBTs 650V 30A TO-3PFM Field Stp Trnch IGBT |
auf Bestellung 846 Stücke: Lieferzeit 10-14 Tag (e) |
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