RGTV60TS65DGC11 ROHM Semiconductor
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.93 EUR |
| 10+ | 8.03 EUR |
| 25+ | 6.78 EUR |
| 100+ | 6.51 EUR |
| 250+ | 5.70 EUR |
| 450+ | 4.82 EUR |
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Technische Details RGTV60TS65DGC11 ROHM Semiconductor
Description: IGBT TRNCH FIELD 650V 60A TO247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 95 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/105ns, Switching Energy: 570µJ (on), 500µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 64 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 194 W.
Weitere Produktangebote RGTV60TS65DGC11
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RGTV60TS65DGC11 | Hersteller : Rohm Semiconductor |
 Description: IGBT TRNCH FIELD 650V 60A TO247NPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 95 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/105ns Switching Energy: 570µJ (on), 500µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 64 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 194 W |
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