RGTVX2TS65DGC13 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 650V 111A TO247GE
Power - Max: 319 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 111 A
Gate Charge: 123 nC
Test Condition: 400V, 60A, 10Ohm, 15V
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Td (on/off) @ 25°C: 49ns/150ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247GE
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Reverse Recovery Time (trr): 111 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 13.57 EUR |
| 10+ | 9.28 EUR |
| 120+ | 6.72 EUR |
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Technische Details RGTVX2TS65DGC13 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 111A TO247GE, Power - Max: 319 W, Current - Collector Pulsed (Icm): 240 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 111 A, Gate Charge: 123 nC, Test Condition: 400V, 60A, 10Ohm, 15V, Switching Energy: 2.08mJ (on), 1.15mJ (off), Td (on/off) @ 25°C: 49ns/150ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247GE, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A, Reverse Recovery Time (trr): 111 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote RGTVX2TS65DGC13 nach Preis ab 8.32 EUR bis 13.73 EUR
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RGTVX2TS65DGC13 | Hersteller : ROHM Semiconductor |
IGBTs 2us Short-Circuit Tol 650V 60A FRD Built-in TO-247N Field Stop Trench IGBT |
auf Bestellung 395 Stücke: Lieferzeit 10-14 Tag (e) |
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