RGTVX2TS65GC11 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: IGBT TRENCH FS 650V 111A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/150ns
Switching Energy: 2.08mJ (on), 1.15mJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 123 nC
Current - Collector (Ic) (Max): 111 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 319 W
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.21 EUR |
| 30+ | 3.40 EUR |
| 120+ | 2.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RGTVX2TS65GC11 Rohm Semiconductor
Description: IGBT TRENCH FS 650V 111A TO-247N, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A, Supplier Device Package: TO-247N, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 49ns/150ns, Switching Energy: 2.08mJ (on), 1.15mJ (off), Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 123 nC, Current - Collector (Ic) (Max): 111 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 319 W.
Weitere Produktangebote RGTVX2TS65GC11 nach Preis ab 5.23 EUR bis 10.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RGTVX2TS65GC11 | Hersteller : ROHM Semiconductor |
IGBT Transistors 650V 60A Field Stop Trench IGBT |
auf Bestellung 444 Stücke: Lieferzeit 10-14 Tag (e) |
|