RGTVX2TS65GC11 Rohm Semiconductor

Description: IGBT TRENCH FS 650V 111A TO-247N, Power - Max: 319 W, Current - Collector Pulsed (Icm): 240 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 111 A, Gate Charge: 123 nC, Test Condition: 400V, 60A, 10Ohm, 15V, Switching Energy: 2.08mJ (on), 1.15mJ (off), Td (on/off) @ 25°C: 49ns/150ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247N, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.